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IRFBC40 Folha de dados(PDF) 1 Page - Harris Corporation |
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IRFBC40 Folha de dados(HTML) 1 Page - Harris Corporation |
1 / 7 page 5-1 Semiconductor Features • 6.2A and 5.4A, 600V •rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND IRFBC40 TO-220AB IRFBC40 IRFBC42 TO-220AB IRFBC42 NOTE: When ordering, include the entire part number. G D S DRAIN (FLANGE) GATE SOURCE DRAIN January 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 2157.2 IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
Nº de peça semelhante - IRFBC40 |
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Descrição semelhante - IRFBC40 |
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