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AD8067ART-REEL Folha de dados(PDF) 7 Page - Analog Devices

Nome de Peças AD8067ART-REEL
Descrição Electrónicos  High Gain Bandwidth Product Precision Fast FET??Op Amp
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

AD8067ART-REEL Folha de dados(HTML) 7 Page - Analog Devices

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AD8067
ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Supply Voltage
26.4 V
Power Dissipation
See Figure 3
Common-Mode Input Voltage
VEE – 0.5 V to VCC + 0.5 V
Differential Input Voltage
1.8 V
Storage Temperature
–65°C to +125°C
Operating Temperature Range
–40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those
indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Maximum Power Dissipation
The associated raise in junction temperature (TJ) on the die limits
the maximum safe power dissipation in the AD8067 package. At
approximately 150°C, which is the glass transition temperature, the
plastic will change its properties. Even temporarily exceeding this
temperature limit may change the stresses that the package exerts
on the die, permanently shifting the parametric performance of the
AD8067. Exceeding a junction temperature of 175°C for an
extended period of time can result in changes in the silicon devices,
potentially causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the voltage
between the supply pins (VS) times the quiescent current (IS).
Assuming the load (RL) is referenced to midsupply, the total drive
power is VS/2 × IOUT, some of which is dissipated in the package
and some in the load (VOUT × IOUT). The difference between the
total drive power and the load power is the drive power dissipated
in the package. RMS output voltages should be considered.
()
Power
Load
Power
Drive
Total
Power
Quiescent
PD
+
=
()
L
OUT
L
OUT
S
S
S
D
R
V
R
V
V
I
V
P
2
2


×
+
×
=
If RL is referenced to VS– as in single-supply operation, then the
total drive power is VS × IOUT.
If the RMS signal levels are indeterminate, then consider the worst
case, when VOUT = VS/4 for RL to midsupply:
() ()
L
S
S
S
D
R
/
V
I
V
P
2
4
+
×
=
In single-supply operation with RL referenced to VS–, worst case is
VOUT
= VS/2.
Airflow will increase heat dissipation effectively, reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes will
reduce the θJA.
Figure 3 shows the maximum safe power dissipation in the pack-
age versus ambient temperature for the SOT-23-5 (180°C/W)
package on a JEDEC standard 4-layer board. θJA
values are
approximations.
It should be noted that for every 10°C rise in temperature, IB
approximately doubles (See Figure 22).
–40
2.0
1.5
0.5
0
0
AMBIENT TEMPERATURE – °C
1.0
–30 –20 –10
80
10
20
30
40
50
60
70
SOT-23-5
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
Rev. 0 | Page 7 of 24


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