BAR64V-05W

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 25-Feb-13

1

Document Number: 81836

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

RF PIN Diodes - Dual, Common Cathode in SOT-323

DESCRIPTION

Characterized by low reverse capacitance the PIN diodes

BAR64V-05W was designed for RF signal switching and

tuning. As a function of the forward bias current the forward

resistance (RF) can be adjusted over a wide range. A long

carrier life time offers low signal distortion for signals over

10 MHz up to 3 GHz. Typical applications for these PIN

diodes are switches and attenuators in wireless, mobile, and

TV-systems.

FEATURES

• High voltage current controlled RF resistor

• Small diode capacitance

• Low series inductance

• Low forward resistance

• Improved performance due to two separate dice

• Base P/N-E3 - RoHS-compliant, commercial grade

• Material categorization: For definitions of compliance

APPLICATIONS

• For frequencies up to 3 GHz

• RF-signal tuning

• Signal attenuator and switches

• Mobile, wireless and TV-Applications

MECHANICAL DATA

Case: SOT-323

Weight: approx. 5.7 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

12

3

PARTS TABLE

PART

ORDERING CODE

TYPE MARKING

INTERNAL CONSTRUCTION

REMARKS

BAR64V-05W

BAR64V-05W-E3-08 or BAR64V-05W-E3-18

DW5

Dual diodes common cathode

Tape and reel

PART

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

100

V

Forward continuous current

100

mA

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Junction temperature

150

°C

Storage temperature range

- 55 to + 150

°C

Operating temperature range

- 55 to + 125

°C