Os motores de busca de Datasheet de Componentes eletrônicos |
|
SD1530-7 Folha de dados(PDF) 1 Page - Advanced Semiconductor |
|
SD1530-7 Folha de dados(HTML) 1 Page - Advanced Semiconductor |
|
1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 75 mA 55 V BVEBO IE = 25 mA 4.0 V hFE VCE = 5.0 V IC = 300 mA 10 --- PG η η C VCC = 50 V Pout = 25 W fo = 960 to 1215 MHz PULSE WIDTH = 10 µS DUTY CYCLE = 1.0% 8.5 10 45 dB % NPN SILICON RF POWER TRANSISTOR ASI SD1530-7 DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance MAXIMUM RATINGS IC 2.5 A VCES 55 V PDISS 125 W @ TC = 25 OC TJ -55 OC to +200 OC TSTG -55 OC to +200 OC θθ JC 1.4 OC/W PACKAGE STYLE 250 2L FLG (A) 1 = COLLECTOR 2 = EMITTER 3 = BASE |
Nº de peça semelhante - SD1530-7 |
|
Descrição semelhante - SD1530-7 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |