TC55VCM216ASTN55 datasheet(11/14 Pages) TOSHIBA

Nome de Peças	TC55VCM216ASTN55

Descrição Electrónicos	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

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11 / 14 page

TC55VCM216ASTN40,55

2002-07-04

11/14

DATA RETENTION CHARACTERISTICS (Ta

==== −−−−40° to 85°C)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

VDH

Data Retention Supply Voltage

1.5



3.6

V

VDH = 3.6 V Ta = −40~85°C



10

Ta

= −40~40°C



2

IDDS2

Standby Current

VDH = 3.0 V

Ta

= −40~85°C



5

µA

tCDR

Chip Deselect to Data Retention Mode Time

0



ns

tR

Recovery Time

5



ms

CONTROLLED DATA RETENTION MODE

(See Note 1)

CE2 CONTROLLED DATA RETENTION MODE

(See Note 3)

,

CONTROLLED DATA RETENTION MODE

(See Note 4)

VDD

2.3 V

GND

VIL

DATA RETENTION MODE

tR

tCDR

VDD

0.2 V

VIH

CE2

CE1

VDD

2.3 V

GND

VIH

DATA RETENTION MODE

tR

(See Note 2)

tCDR

VDD

VDD − 0.2 V

1

CE

UB LB

VDD

2.3 V

GND

VIH

DATA RETENTION MODE

tR

(See Note 5)

tCDR

VDD

VDD − 0.2 V

UB

, LB

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TC55VCM216ASTN55 Folha de dados(PDF) 11 Page - Toshiba Semiconductor

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Nº de peça semelhante - TC55VCM216ASTN55

Descrição semelhante - TC55VCM216ASTN55

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