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2SC3356 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Nome de Peças 2SC3356
Descrição Electrónicos  Silicon Epitaxial Planar Transistor
Download  4 Pages
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Fabricante Electrônico  BILIN [Galaxy Semi-Conductor Holdings Limited]
Página de início  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SC3356 Folha de dados(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Silicon Epitaxial Planar Transistor
2SC3356
C142
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
20
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
12
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
3
V
Collector cut-off current
ICBO
VCB=10V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=1V,IC=0
1
μA
DC current gain
hFE
VCE=10V,IC=20mA
50
120
300
Transition frequency
fT
VCE=10V,IC= 20mA
7
GHz
Insertion power gain
|S21e|
2
VCE=10V, IC= 20mA ,
f=1GHz
11.5
dB
Feed-back capacitance
Cre
VCB=10V, IE=0,f=1MHz
0.55
1.0
pF
Noise Figure
NF
VCE=10V,IC=7mA,
f=1GHz
1.1
2.0
dB
CLASSIFICATION OF hFE
Rank
Q
R
S
Range
50-100
80-160
125-250
Marking
R23
R24
R25


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