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SS8050 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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SS8050 Folha de dados(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor SS8050 C086 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=6V,IC=0 0.1 μA VCE=1V,IC=100mA 120 400 DC current gain hFE VCE=1V,IC=800mA 40 110 Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80mA 0.28 0.5 V Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80mA 0.98 1.2 V Base-emitter voltage VBE VCE=1V IC=10mA 0.66 1 V Output capacitance Cob VCB=10V, IE=0 f=1MHz 9.0 pF Transition frequency fT VCE=10V, IC= 50mA f=30MHz 100 190 MHz CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 |
Nº de peça semelhante - SS8050 |
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Descrição semelhante - SS8050 |
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