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SS8550 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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SS8550 Folha de dados(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor SS8550 C087 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-1V,IC=-100mA 120 400 VCE=-1V,IC=-800mA 40 80 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.28 -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -0.98 -1.2 V Base-emitter voltage VBE VCE=1V IC=10mA -0.66 -1.0 V Transition frequency fT VCE=-10V, IC= -50mA f=30MHz 100 200 MHz Output capacitance Cob VCB=-10V,IE=0,f=1MHz 15 pF CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 |
Nº de peça semelhante - SS8550 |
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Descrição semelhante - SS8550 |
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