SI7405BDN datasheet(1/13 Pages) VISHAY

Nome de Peças	SI7405BDN

Descrição Electrónicos	P-Channel 12-V (D-S) MOSFET

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Vishay Siliconix

Si7405BDN

New Product

Document Number: 69941

S-81549-Rev. B, 07-Jul-08

www.vishay.com

1

P-Channel 12-V (D-S) MOSFET

FEATURES

•

Halogen-free Option Available

•

TrenchFET® Power MOSFET

APPLICATIONS

•

Load Switch, PA Switch and Power Switch for Portable

Devices

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 12

0.013 at VGS = - 4.5 V

- 16a

46 nC

0.017 at VGS = - 2.5 V

- 16a

0.024 at VGS = - 1.8 V

- 16a

Ordering Information: Si7405BDN-T1-E3 (Lead (Pb)-free)

Si7405BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

S

G

D

P-Channel MOSFET

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (h

ttp://www.vishay.com/ppg?73257).. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 81 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 16a

A

TC = 70 °C

- 16a

TA = 25 °C

- 13.5b, c

TA = 70 °C

- 11b, c

Pulsed Drain Current

IDM

- 40

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 16a

TA = 25 °C

- 3b, c

Maximum Power Dissipation

TC = 25 °C

PD

33

W

TC = 70 °C

21

TA = 25 °C

3.6b, c

TA = 70 °C

2.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

28

35

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.9

3.8

RoHS

COMPLIANT

Nº de peça semelhante - SI7405BDN

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	SI7405BDN-T1-GE3	1Mb / 8P	P-Channel 12 V (G-S) MOSFET

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Descrição semelhante - SI7405BDN

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI2335DS	48Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. A, 23-Oct-00
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More results

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