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SI7884BDP Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças SI7884BDP
Descrição Electrónicos  N-Channel 40-V (D-S) MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
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Document Number: 68395
S-82113-Rev. B, 08-Sep-08
Vishay Siliconix
Si7884BDP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
40
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
46
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 6.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
13
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 16 A
0.0062
0.0075
Ω
VGS = 4.5 V, ID = 14 A
0.0073
0.009
Forward Transconductancea
gfs
VDS = 15 V, ID = 16 A
55
S
Dynamicb
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
3540
pF
Output Capacitance
Coss
335
Reverse Transfer Capacitance
Crss
142
Total Gate Charge
Qg
VDS = 10 V, VGS = 10 V, ID = 16 A
51
77
nC
VDS = 10 V, VGS = 4.5 V, ID = 16 A
21
32
Gate-Source Charge
Qgs
10.7
Gate-Drain Charge
Qgd
3.0
Gate Resistance
Rg
f = 1 MHz
0.75
1.5
Ω
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
30
45
ns
Rise Time
tr
14
21
Turn-Off Delay Time
td(off)
38
60
Fall Time
tf
11
17
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
14
21
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
32
50
Fall Time
tf
815
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
32
A
Pulse Diode Forward Current
ISM
50
Body Diode Voltage
VSD
IS = 10 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
25
50
ns
Body Diode Reverse Recovery Charge
Qrr
19
38
nC
Reverse Recovery Fall Time
ta
13
ns
Reverse Recovery Rise Time
tb
12


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