KTA2014 datasheet(2/4 Pages) BILIN

Nome de Peças	KTA2014

Descrição Electrónicos	PNP Silicon Epitaxial Planar Transistor

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Fabricante Electrônico	BILIN [Galaxy Semi-Conductor Holdings Limited]

Página de início	http://www.galaxycn.com

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Production specification

PNP Silicon Epitaxial Planar Transistor

KTA2014

F047

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-0.1mA,IE=0

-50

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-6V,IC=-2mA

70

400

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB=-10mA

-0.1

-0.3

V

Transition frequency

fT

VCE=-10V, IC= -1mA

80

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

4

7

pF

Noise figure

NF

VCE=6V,IC=0.1mA,f=1K

Hz,Rg=10KΩ

1.0

10

dB

CLASSIFICANTION OF hFE

Rank

O

Y

G

Range

70-140

120-240

200-240

marking

SO

SY

SG

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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KTA2014 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

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