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2SC4097 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4097 Folha de dados(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification Silicon Epitaxial Planar Transistor 2SC4097 F003 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 μA Emitter cut-off current IEBO VEB=4V,IC=0 1 μA DC current gain hFE VCE=3V,IC=100mA 82 390 Collector-emitter saturation voltage VCE(sat) ICE=500mA,IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) ICE=500mA,IB=50mA 1.1 V Transition frequency fT VCE=5V, IC= 20mA,f=100MHz 250 MHz Collector output capacitance Cob VCB=12V,IE=0,f=1MHz 6 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking CP CQ CR |
Nº de peça semelhante - 2SC4097 |
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Descrição semelhante - 2SC4097 |
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