Os motores de busca de Datasheet de Componentes eletrônicos |
|
IRF9Z14 Folha de dados(PDF) 2 Page - Vishay Siliconix |
|
IRF9Z14 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91088 2 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z14, SiHF9Z14 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -3.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.060 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 μA VDS = - 48 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 4.0 Ab - - 0.50 Ω Forward Transconductance gfs VDS = - 25 V, ID = - 4.0 Ab 1.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 270 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -31 - Total Gate Charge Qg VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b -- 12 nC Gate-Source Charge Qgs -- 3.8 Gate-Drain Charge Qgd -- 5.1 Turn-On Delay Time td(on) VDD = - 30 V, ID = - 6.7 A, Rg = 24 Ω, RD = 4.0 Ω, see fig. 10b -11 - ns Rise Time tr -63 - Turn-Off Delay Time td(off) -10 - Fall Time tf -31 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 6.7 A Pulsed Diode Forward Currenta ISM -- - 27 Body Diode Voltage VSD TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb -- - 5.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb -80 160 ns Body Diode Reverse Recovery Charge Qrr - 0.096 0.19 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
Nº de peça semelhante - IRF9Z14 |
|
Descrição semelhante - IRF9Z14 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |