IRF9610S, SiHF9610S

www.vishay.com

Vishay Siliconix

S12-1558-Rev. D, 02-Jul-12

2

Document Number: 91081

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-62

°C/W

Maximum Junction-to-Ambient

-40

Maximum Junction-to-Case (Drain)

-6.4

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

- 200

-

-

V

V

-

- 0.23

-

V/°C

Gate-Source Threshold Voltage

- 2

-

- 4

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

- 100

μA

-

-

- 500

Drain-Source On-State Resistance

--

3



Forward Transconductance

0.90

-

-

S

Dynamic

Input Capacitance

f = 1 MHz, see fig. 10

-

170

-

pF

Output Capacitance

-50

-

Reverse Transfer Capacitance

-15

-

Total Gate Charge

--

11

nC

Gate-Source Charge

--

7

Gate-Drain Charge

--

4

Turn-On Delay Time

-8

-

ns

Rise Time

-15

-

Turn-Off Delay Time

-1

-

Fall Time

-8

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

- 1.8

A

--

- 7

Body Diode Voltage

--

- 5.8

V

Body Diode Reverse Recovery Time

-

240

360

ns

Body Diode Reverse Recovery Charge

-1.7

2.6

μC

Forward Turn-On Time

D

S

G

S

D

G