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SI4646DY Folha de dados(PDF) 4 Page - Vishay Siliconix

Nome de Peças SI4646DY
Descrição Electrónicos  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
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Document Number: 68762
S09-0868-Rev. B, 18-May-09
Vishay Siliconix
Si4646DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD -Source-to-Drain Voltage (V)
1
0.01
0.001
0.1
10
100
TJ = 150 °C
TJ = 25 °C
0
25
50
75
100
125
150
TJ -Junction Temperature (°C)
30 V
10 V
20 V
10-6
10-3
10-1
10-5
10-4
10-2
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
02
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TJ =25 °C
TJ = 125 °C
ID =10A
0
30
60
90
120
150
0
1
1
1
0
0
.
00.01
Time (s)
0.1
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
100 ms
1 s
10 s
DC
Limited byRDS(on)*
BVDSS
Limited
10 ms
1ms


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