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SI4646DY Folha de dados(PDF) 4 Page - Vishay Siliconix |
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SI4646DY Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 68762 S09-0868-Rev. B, 18-May-09 Vishay Siliconix Si4646DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) 30 V 10 V 20 V 10-6 10-3 10-1 10-5 10-4 10-2 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID =10A 0 30 60 90 120 150 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms 1 s 10 s DC Limited byRDS(on)* BVDSS Limited 10 ms 1ms |
Nº de peça semelhante - SI4646DY |
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Descrição semelhante - SI4646DY |
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