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SI5442DU Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SI5442DU Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si5442DU Document Number: 63233 S13-2149-Rev. B, 14-Oct-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • 100% Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch, PA Switch, and for Portable Applications • Point-of-Load • DC/DC Converters • Power Management Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) 20 0.0100 at VGS = 4.5 V 25 16.6 nC 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 Ordering Information: Si5442DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View PowerPAK ChipFET Single D D D G 1 2 8 7 6 5 D D D S 3 4 S 1.9 mm Marking Code AQ XXX Lot Traceability and Date Code Part # Code N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 25a A TC = 70 °C 25a TA = 25 °C 12.4b, c TA = 70 °C 9.9b, c Pulsed Drain Current (t = 300 µs) IDM 60 Continuous Source-Drain Diode Current TC = 25 °C IS 25a TA = 25 °C 2.6b, c Maximum Power Dissipation TC = 25 °C PD 31 W TC = 70 °C 20 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 34 40 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 34 |
Nº de peça semelhante - SI5442DU |
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Descrição semelhante - SI5442DU |
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