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SI5442DU Folha de dados(PDF) 1 Page - Vishay Siliconix

Nome de Peças SI5442DU
Descrição Electrónicos  N-Channel 20 V (D-S) MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
Si5442DU
Document Number: 63233
S13-2149-Rev. B, 14-Oct-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 20 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
100% Rg Tested
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Load Switch, PA Switch, and for Portable Applications
Point-of-Load
DC/DC Converters
Power Management
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)
a
Qg (Typ.)
20
0.0100 at VGS = 4.5 V
25
16.6 nC
0.0115 at VGS = 2.5 V
25
0.0135 at VGS = 1.8 V
25
Ordering Information:
Si5442DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
PowerPAK ChipFET Single
D
D
D
G
1
2
8
7
6
5
D
D
D
S
3
4
S
1.9
mm
Marking Code
AQ
XXX
Lot Traceability
and Date Code
Part # Code
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
25a
A
TC = 70 °C
25a
TA = 25 °C
12.4b, c
TA = 70 °C
9.9b, c
Pulsed Drain Current (t = 300 µs)
IDM
60
Continuous Source-Drain Diode Current
TC = 25 °C
IS
25a
TA = 25 °C
2.6b, c
Maximum Power Dissipation
TC = 25 °C
PD
31
W
TC = 70 °C
20
TA = 25 °C
3.1b, c
TA = 70 °C
2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
 5 s
RthJA
34
40
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
34


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