SI7342DP datasheet(4/6 Pages) VISHAY

Nome de Peças	SI7342DP

Descrição Electrónicos	N-Channel 30 V (D-S) Fast Switching MOSFET

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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Document Number: 72751

S11-0212-Rev. D, 14-Feb-11

Vishay Siliconix

Si7342DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Threshold Voltage

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power

0

60

100

20

40

Time (s)

1

600

10

80

0.1

0.01

100

Safe Operating Area, Junction-to-Case

100

1

0.1

1

10

100

0.01

10

100 ms

0.1

Limited by RDS(on)*

TC = 25 °C

Single Pulse

1 s

10 s

DC

10 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

10- 3

10- 2

1

10

600

10- 1

10- 4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 125 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

Nº de peça semelhante - SI7342DP

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Descrição semelhante - SI7342DP

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