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SI7742DP Folha de dados(PDF) 5 Page - Vishay Siliconix

Nome de Peças SI7742DP
Descrição Electrónicos  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7742DP Folha de dados(HTML) 5 Page - Vishay Siliconix

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Document Number: 68718
S10-2003-Rev. B, 06-Sep-10
www.vishay.com
5
Vishay Siliconix
Si7742DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
26
52
78
104
130
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
20
40
60
80
100
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
TC - Case Temperature (°C)


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