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SI5475BDC Folha de dados(PDF) 3 Page - Vishay Siliconix |
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SI5475BDC Folha de dados(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 73381 S-83054-Rev. D, 29-Dec-08 www.vishay.com 3 Vishay Siliconix Si5475BDC TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru 2 V 1.5 V 1 V VDS - Drain-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 04 8 12 16 20 VGS = 2.5 V VGS = 4.5 V VGS = 1.8 V ID - Drain Current (A) 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 ID = 7.7 A VDS = 6 V VDS = 8.4 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 300 600 900 1200 1500 1800 2100 0246 8 10 12 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 ID = 7.7 A VGS = 4.5, 2.5, 1.8 V TJ - Junction Temperature (°C) |
Nº de peça semelhante - SI5475BDC |
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Descrição semelhante - SI5475BDC |
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