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BC817-16W Folha de dados(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BC817-16W Folha de dados(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 5 page Production specification NPN general purpose transistor BC817W/BC818W F076 www.gmicroelec.com Rev.B 1 FEATURES High collector current. High current gain. Low collector-emitter saturation voltage. Complementary types:BC807W,BC808W. APPLICATIONS General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code BC817-16W 6A SOT-323 BC817-25W 6B SOT-323 BC817-40W 6C SOT-323 BC818-16W 6E SOT-323 BC818-25W 6F SOT-323 BC818-40W 6G SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage BC817W BC818W 50 30 V VCEO Collector-Emitter Voltage BC817W BC818W 45 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA ICM Peak Collecter Current 1 A IB Base Current 100 mA IBM Peak Base Current 200 mA Ptot Total Power Dissipation 250 mW Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
Nº de peça semelhante - BC817-16W |
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Descrição semelhante - BC817-16W |
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