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CXT5401 Folha de dados(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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CXT5401 Folha de dados(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Surface Mount PNP Silicon Transistor CXT5401 E060 www.gmicroelec.com Rev.A 1 FEATURES Switching and amplification in high voltage. Low current(max. 600mA) High voltage (max. 180V) APPLICATIONS High voltage amplifier application. SOT-89 ORDERING INFORMATION Type No. Marking Package Code CXT5401 5401 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PD Power Dissipation 0.5 W RθJA Thermal resistance 250 ℃ /W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
Nº de peça semelhante - CXT5401 |
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Descrição semelhante - CXT5401 |
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