BC817-16 datasheet(2/5 Pages) BILIN

Nome de Peças	BC817-16

Descrição Electrónicos	NPN General Purpose Amplifier

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Fabricante Electrônico	BILIN [Galaxy Semi-Conductor Holdings Limited]

Página de início	http://www.galaxycn.com

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Production specification

NPN General Purpose Amplifier

BC817-16/-25/-40

C042

www.gmicroelec.com

Rev.B

2

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10μA IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA IC=0

5

V

Collector cut-off current

ICBO

VCB=25V IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=4V IC=0

0.1

μA

DC current gain

hFE

VCE=1V IC=100mA

100

160

250

400

600

VCE=1V IC=300mA

60

100

170

Collector-emitter saturation voltage

VCE(sat)

IC=500mA IB=50mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA IB=50mA

1.2

V

Collecter capacitance

Cob

VCB=10V,f=1MHz

6

pF

Transition frequency

fT

VCE=5V IC=50mA

f=100MHz

170

MHz

CLASSIFICATION OF HFE(1)

Rank

BC817-16

BC817-25

BC817-40

Range

100-250

160-400

250-600

Marking

6A

6B▪

6C

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Nº de peça semelhante - BC817-16

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	BC817-16	47Kb / 8P	NPN general purpose transistor 1999 Jun 01
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Descrição semelhante - BC817-16

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BC817-16 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Nº de peça semelhante - BC817-16

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