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SI8404DB Folha de dados(PDF) 3 Page - Vishay Siliconix

Nome de Peças SI8404DB
Descrição Electrónicos  N-Channel 1.5-V (G-S) MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI8404DB Folha de dados(HTML) 3 Page - Vishay Siliconix

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Document Number: 73518
S-82118-Rev. C, 08-Sep-08
www.vishay.com
3
Vishay Siliconix
Si8404DB
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
6.25
A
Pulse Diode Forward Current
ISM
20
Body Diode Voltage
VSD
IS = 1 A, VGS = 0 V
0.6
1.2
V
Body Diode Reverse Recovery
Time
trr
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C
104
156
ns
Body Diode Reverse Recovery
Charge
Qrr
88
132
nC
Reverse Recovery Fall Time
ta
26
ns
Reverse Recovery Rise Time
tb
78
Output Characteristics
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
V
= 5 thru 1.5 V
GS
V
= 1 V
GS
Transfer Characteristics
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
1.5
1.8
TC = 25 °C
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
TC = 125 °C


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