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2SC4548 Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC4548 Folha de dados(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification NPN Epitaxial Planar Silicon Transistor 2SC4548 E055 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10uA,IE=0 400 V Collector- emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter- base breakdown voltage V(BR)EBO IE=10uA,IC=0 5 V Collector cut-off current ICBO VCB=300V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA DC current gain hFE VCE=10V,IC=50mA 60 200 Base-emitter saturation voltage VBE(sat) IC=50mA,IB=5mA 1 V Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.6 V Transition frequency fT VCE=30V, IC=10mA 70 MHz Output capacitance Cob VCB=30V,IE=0,f=1MHz 4 pF Reverse Transfer Capacitance Cre VCB=30V,IE=0,f=1MHz 3 pF Turn-ON Time ton 0.25 uS Turn-OFF Time toff VCC=150V,IC=50mA, IB1=IB2=5mA 5 uS CLASSIFICATION OF hFE Rank D E Range 60-120 100-200 |
Nº de peça semelhante - 2SC4548 |
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Descrição semelhante - 2SC4548 |
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