2SC4115 datasheet(2/4 Pages) BILIN

Nome de Peças	2SC4115

Descrição Electrónicos	NPN Epitaxial Planar Silicon Transistor

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Fabricante Electrônico	BILIN [Galaxy Semi-Conductor Holdings Limited]

Página de início	http://www.galaxycn.com

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Production specification

NPN Epitaxial Planar Silicon Transistor

2SC4115

E105

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=50uA,IE=0

40

V

Collector-emitter breakdown voltage V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50uA,IC=0

6

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=0.1A

120

560

Collector-emitter saturation voltage

VCE(sat)

IC=2A, IB=0.1A

0.5

V

Transition frequency

fT

VCE=2V,Ic=0.5A

F=100MHZ

200

290

MHz

CLASSIFICATION OF hFE

Range

120-270

180-390

270-560

Rank

Q

R

S

Nº de peça semelhante - 2SC4115

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Guangdong Kexin Industr...	2SC4115	51Kb / 1P	Low Frequency Transistor
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Descrição semelhante - 2SC4115

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Nº de peça semelhante - 2SC4115

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