STGD1100LT1G datasheet(4/5 Pages) ONSEMI

Nome de Peças	STGD1100LT1G

Descrição Electrónicos	Power MOSFET

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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NTGD1100L, STGD1100L

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4

TYPICAL CHARACTERISTICS

0

5

10

15

20

25

30

35

40

45

50

55

60

0

1

234567

8

R2 (k

W)

IL = 1.0 A

VON/OFF = 3.0 V

C1 = 10

mF

C0 = 1.0

mF

td(off)

td(on)

tf

tr

Figure 7. Switching Variation R2 @

VIN = 4.5 V, R1 = 20 kW

0

5

10

15

20

25

30

35

40

45

50

55

60

0

1

23

45678

R2 (k

W)

IL = 1.0 A

VON/OFF = 1.5 V

C1 = 10

mF

C0 = 1.0

mF

td(off)

td(on)

tf

tr

Figure 8. Switching Variation R2 @

VIN = 4.5 V, R1 = 20 kW

Figure 9. Switching Variation R2 @

VIN = 2.5 V, R1 = 20 kW

0

5

10

15

20

25

30

35

40

0

1

23

45678

R2 (k

W)

IL = 1.0 A

VON/OFF = 1.5 V

C1 = 10

mF

C0 = 1.0

mF

td(off)

td(on)

tf

tr

Figure 10. Switching Variation R2 @

VIN = 2.5 V, R1 = 20 kW

R2 (k

W)

td(off)

td(on)

tf

tr

0

5

10

15

20

25

30

0

1

234567

8

IL = 1.0 A

VON/OFF = 3.0 V

C1 = 10

mF

C0 = 1.0

mF

1E−03

1E−02

1E−01

1E+00

1E+01

1E+02

1E+03

Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad)

1.0

0.1

0.01

SQUARE WAVE PULSE DURATION TIME, t (sec)

D = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

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