STD4N90K5 datasheet(3/15 Pages) STMICROELECTRONICS

Nome de Peças	STD4N90K5

Descrição Electrónicos	N-channel 900 V, 1.90 廓 typ.,3 A MDmesh??K5 Power MOSFET in a DPAK package

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STD4N90K5

Electrical ratings

DocID029956 Rev 1

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

3

A

ID

Drain current (continuous) at TC = 100 °C

1.9

A

ID(1)

Drain current (pulsed)

12

A

PTOT

Total dissipation at TC = 25 °C

60

W

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

Tj

Operating junction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 3 A, di/dt ≤ 100 A/μs; VDS peak < V(BR)DSS, VDD = 450 V.

(3)VDS ≤ 720 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-pcb(1)

Thermal resistance junction-pcb

50

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

1

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

160

mJ

Nº de peça semelhante - STD4N90K5

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STD4N20	271Kb / 9P	N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET
	STD4N25	142Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
	STD4N52K3	1Mb / 21P	N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
	STD4N52K3	1Mb / 2P	N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages February 2013 Rev 2
VBsemi Electronics Co.,...	STD4N52K3	1Mb / 9P	Power MOSFET

More results

Descrição semelhante - STD4N90K5

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STP4N90K5	742Kb / 13P	N-channel 900 V, 1.90 廓 typ.,3 A MDmesh??K5 Power MOSFET in a TO-220 package November 2016 Rev 1
	STF4N90K5	726Kb / 13P	N-channel 900 V, 1.90 廓 typ., 4 A MDmesh??K5 Power MOSFET in a TO-220FP package November 2016 Rev 2
	STB20N90K5	883Kb / 15P	N-channel 900 V, 0.21 廓 typ., 20 A MDmesh??K5 Power MOSFET in a D짼PAK package January 2017 Rev 3
	STD3LN80K5	815Kb / 15P	N-channel 800 V, 2.75 廓 typ., 2 A MDmesh??K5 Power MOSFET in a DPAK package July 2016 Rev 2
	STP7N90K5	729Kb / 13P	N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220 package October 2016 Rev 1
	STF6N90K5	716Kb / 13P	N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220FP package November 2016 Rev 1
	STF7N90K5	712Kb / 13P	N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220FP package October 2016 Rev 1
	STP8N90K5	707Kb / 13P	N-channel 900 V, 0.60 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220 package November 2016 Rev 1
	STP20N90K5	695Kb / 13P	N-channel 900 V, 0.21 廓 typ., 20 A MDmesh??K5 Power MOSFET in a TO-220 package January 2017 Rev 3
	STF20N90K5	690Kb / 13P	N-channel 900 V, 0.21 廓 typ., 20 A MDmesh??K5 Power MOSFET in a TO-220FP package January 2017 Rev 3

More results

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