July 2016

DocID028602 Rev 2

1/16

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

STD180N4F6

N-

channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6

Power MOSFET in a DPAK package

Datasheet - preliminary data

Figure 1: Internal schematic diagram

Features

Order code

STD180N4F6

40 V

2.8 mΩ

80 A

130 W



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications



Power tools

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

packages.

Table 1: Device summary

Order code

Marking

Package

Packing

STD180N4F6

180N4F6

DPAK

Tape and reel