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STP4N90K5 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STP4N90K5
Descrição Electrónicos  N-channel 900 V, 1.90typ.,3 A MDmesh??K5 Power MOSFET in a TO-220 package
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STP4N90K5
Electrical characteristics
DocID029953 Rev 1
5/13
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD= 450 V, ID = 1.50 A,
RG
= 4.7 Ω, VGS = 10 V
(see Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
10.5
-
ns
tr
Rise time
-
11.8
-
ns
td(off)
Turn-off delay time
-
26.4
-
ns
tf
Fall time
-
25.5
-
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
3
A
ISDM(1)
Source-drain current
(pulsed)
-
12
A
VSD(2)
Forward on voltage
ISD = 3 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 3 A, di/dt = 100 A/µs,VDD =
60 V
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
289
ns
Qrr
Reverrse recovery
charge
-
1.56
µC
IRRM
Reverse recovery
current
-
10.8
A
trr
Reverse recovery time
ISD = 3 A, di/dt = 100 A/µs VDD =
60 V, Tj = 150 °C
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
494
ns
Qrr
Reverse recovery
charge
-
2.45
µC
IRRM
Reverse recovery
current
-
9.9
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ± 1 mA,ID = 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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