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STP4N90K5 Folha de dados(PDF) 5 Page - STMicroelectronics |
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STP4N90K5 Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 13 page STP4N90K5 Electrical characteristics DocID029953 Rev 1 5/13 Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 450 V, ID = 1.50 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 10.5 - ns tr Rise time - 11.8 - ns td(off) Turn-off delay time - 26.4 - ns tf Fall time - 25.5 - ns Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 3 A ISDM(1) Source-drain current (pulsed) - 12 A VSD(2) Forward on voltage ISD = 3 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs,VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 289 ns Qrr Reverrse recovery charge - 1.56 µC IRRM Reverse recovery current - 10.8 A trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 494 ns Qrr Reverse recovery charge - 2.45 µC IRRM Reverse recovery current - 9.9 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1 mA,ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. |
Nº de peça semelhante - STP4N90K5 |
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Descrição semelhante - STP4N90K5 |
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