STPSC2H12 datasheet(3/10 Pages) STMICROELECTRONICS

Nome de Peças	STPSC2H12

Descrição Electrónicos	1200 V power Schottky silicon carbide diode

Download	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

3 / 10 page

STPSC2H12

Characteristics

DocID030271 Rev 1

3/10

1.1

Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values)

Figure 2: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 3: Peak forward current versus case

temperature

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 6: Non- repetitive peak surge forward

current versus pulse duration (sinusoidal

waveform)

0

1

2

3

4

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VF(V)

IF(A)

T

a = 150 °C

Pulse test : t

p = 500 µs

T

a = 25 °C

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

0

100

200

300

400

500

600

700

800

900 1000 1100 1200

VR(V)

IR(µA)

T

j = 25 °C

T

j = 150 °C

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

175

TC(°C)

IM(A)

T

δ = tp/T

tp

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

0

20

40

60

80

100

120

140

160

180

200

0.1

1.0

10.0

100.0

1000.0

10000.0

VR(V)

Cj(pF)

F = 1 MHz

V

OSC = 30 mVRMS

T

j = 25 °C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Single pulse

Zth(j-c) /Rth(j-c)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

tp(s)

T

a = 25 °C

T

a = 150 °C

IFSM(A)

Nº de peça semelhante - STPSC2H12

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STPSC2H065	236Kb / 10P	650 V, 2 A high surge silicon carbide power Schottky diode April 2019 Rev 1

More results

Descrição semelhante - STPSC2H12

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STPSC6H12	267Kb / 8P	1200 V power Schottky silicon carbide diode September 2016 Rev 5
	STPSC10H12	438Kb / 8P	1200 V power Schottky silicon carbide diode
	STPSC5H12	469Kb / 10P	1200 V power Schottky silicon carbide diode January 2017 Rev 1
	STPSC10H12C	432Kb / 10P	1200 V power Schottky silicon carbide diode February 2017 Rev 1
	STPSC15H12	435Kb / 8P	1200 V power Schottky silicon carbide diode
	STPSC20H12	436Kb / 8P	1200 V power Schottky silicon carbide diode May 2016 Rev 2
	STPSC10H12-Y	534Kb / 10P	Automotive grade 1200 V power Schottky silicon carbide diode January 2017 Rev 2
	STPSC40H12C-Y	257Kb / 10P	40 A 1200 V power Schottky silicon carbide diode Rev 1 - January 2021
	STPSC15H12G2-TR	375Kb / 11P	1200 V, 15 A, silicon carbide power Schottky diode Rev 1 - August 2020
	STPSC10H12B2-TR	224Kb / 11P	1200 V, 10 A, silicon carbide power Schottky diode - Rev 1 - August 2020

More results

STPSC2H12 Folha de dados(PDF) 3 Page - STMicroelectronics

STPSC2H12 Folha de dados(HTML) 3 Page - STMicroelectronics

Nº de peça semelhante - STPSC2H12

Descrição semelhante - STPSC2H12

Html Pages

1 2 3 4 5 6 7 8 9 10

Folha de dados Download

Ligação URL