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STB13NM60N Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STB13NM60N
Descrição Electrónicos  Low gate input resistance
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STB13NM60N Folha de dados(HTML) 3 Page - STMicroelectronics

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DocID024095 Rev 3
3/24
STB13NM60N, STD13NM60N
Electrical ratings
24
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
11
A
ID
Drain current (continuous) at TC = 100 °C
6.93
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
44
A
PTOT
Total dissipation at TC = 25 °C
90
W
dv/dt (2)
2.
ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK
DPAK
Rthj-case Thermal resistance junction-case max
1.39
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
3.5
A
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAS, VDD=50 V)
200
mJ


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