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STD5N95K5 Folha de dados(PDF) 5 Page - STMicroelectronics |
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STD5N95K5 Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 26 page STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5 Electrical characteristics DocID024639 Rev 4 5/26 Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 475 V, ID = 1.75 A, RG = 4.7 Ω VGS = 10 V (see Figure 18: "Test circuit for resistive load switching times" and Figure 23: "Switching time waveform") - 12 - ns tr Rise time - 16 - ns td(off) Turn-off delay time - 32 - ns tf Fall time - 25 - ns Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 3.5 A ISDM Source-drain current (pulsed) - 14 A VSD(1) Forward on voltage ISD = 3.5 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 330 ns Qrr Reverse recovery charge - 2.2 µC IRRM Reverse recovery current - 13 A trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 525 ns Qrr Reverse recovery charge - 3.2 µC IRRM Reverse recovery current - 12 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max Unit V (BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID= 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry. |
Nº de peça semelhante - STD5N95K5 |
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Descrição semelhante - STD5N95K5 |
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