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STP11N65M2 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STP11N65M2
Descrição Electrónicos  Extremely low gate charge
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
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STP11N65M2 Folha de dados(HTML) 3 Page - STMicroelectronics

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DocID026376 Rev 1
3/21
STD11N65M2, STP11N65M2, STU11N65M2
Electrical ratings
21
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
(1)
1.
The value is rated according to R
thj-case
and limited by package.
Drain current (continuous) at T
c
= 25 °C
7
A
I
D
(1)
Drain current (continuous) at T
c
= 100 °C
4.4
A
I
DM
(2)
2.
Pulse width limited by T
jmax
Drain current (pulsed)
28
A
P
TOT
(1)
Total dissipation at T
C
= 25 °C
85
W
dv/dt
(3)
3.
I
SD
≤ 7 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
=80% V
(BR)DSS
.
Peak diode recovery voltage slope
(starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
15
V/ns
dv/dt
(4)
4.
V
DS
≤ 520 V
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220
IPAK
R
thj-case
Thermal resistance junction-case max
1.47
°C/W
R
thj-amb
Thermal resistance junction-amb max
62.5
100
°C/W
R
thj-pcb
(1)
1.
When mounted on 1 inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
)
1.5
A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50)
110
mJ


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