STFH18N60M2 datasheet(1/12 Pages) STMICROELECTRONICS

Nome de Peças	STFH18N60M2

Descrição Electrónicos	Extremely low gate charge

Download	12 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

1 / 12 page

June 2016

DocID029424 Rev 2

1/12

This is information on a product in full production.

www.st.com

STFH18N60M2

N-

channel 600 V, 0.255 Ω typ., 13 A MDmesh™ M2

Power MOSFET in a TO-220FP wide creepage package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS @ TJmax

RDS(on) max

ID

STFH18N60M2

650 V

0.28 Ω

13 A



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected



Wide creepage distance of 4.25 mm

between the pins

Applications



Switching applications



LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

The TO-220FP wide creepage package provides

increased surface insulation for Power MOSFETs

to prevent failure due to arcing, which can occur

in polluted environments.

Table 1: Device summary

Order code

Marking

Package

Packing

STFH18N60M2

18N60M2

TO-220FP wide creepage

Tube

AM15572v1_no_tab

D(2)

G(1)

S(3)

Nº de peça semelhante - STFH18N60M2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STFH10N60M2	1Mb / 12P	Extremely low gate charge August 2016 Rev 3
	STFH10N60M6	552Kb / 12P	N-channel 600 V, 520 m typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide creepage package May 2019 Rev 2
	STFH13N60M2	674Kb / 12P	Extremely low gate charge June 2016 Rev 2

More results

Descrição semelhante - STFH18N60M2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STWA48N60M2	776Kb / 12P	Extremely low gate charge December 2015 Rev 1
	STL7N60M2	310Kb / 13P	Extremely low gate charge January 2015 Rev 1
	STD7N60M2	1Mb / 21P	Extremely low gate charge June 2013 Rev 1
	STB28N60M2	1Mb / 21P	Extremely low gate charge
	STD11N65M2	1Mb / 21P	Extremely low gate charge May 2014 Rev 1
	STF5N60M2	743Kb / 13P	Extremely low gate charge June 2016 Rev 2
	STF7N65M2	904Kb / 13P	Extremely low gate charge August 2014 Rev 2
	STL13N65M2	642Kb / 16P	Extremely low gate charge December 2014 Rev 1
	STL19N60M2	770Kb / 15P	Extremely low gate charge January 2016 Rev 1
	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1
	STB24N65M2	1Mb / 20P	Extremely low gate charge

More results

STFH18N60M2 Folha de dados(PDF) 1 Page - STMicroelectronics

STFH18N60M2 Folha de dados(HTML) 1 Page - STMicroelectronics

Nº de peça semelhante - STFH18N60M2

Descrição semelhante - STFH18N60M2

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Folha de dados Download

Ligação URL