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STFU15N80K5 Folha de dados(PDF) 1 Page - STMicroelectronics |
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STFU15N80K5 Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 13 page September 2015 DocID027658 Rev 2 1/13 This is information on a product in full production. www.st.com STFU15N80K5 N- channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STFU15N80K5 800 V 0.375 Ω 14 A Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STFU15N80K5 15N80K5 TO-220FP ultra narrow leads Tube TO-220FP ultra narrow leads 1 2 3 |
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