STGIPL35K120L1

Electrical ratings

Doc ID 022751 Rev 4

5/19

2

Electrical ratings

2.1

Absolute maximum ratings

Table 3.

Inverter part

Symbol

Parameter

Value

Unit

Each IGBT collector emitter voltage

1200

V

(1)

1.

Calculated according to the iterative formula:

Each IGBT continuous collector current

35

A

(2)

2.

Pulse width limited by max junction temperature

Each IGBT pulsed collector current

70

A

100

W

5µs

Table 4.

Control part

Symbol

Parameter

Value

Unit

VH

Maximum VH-H, VH-L voltages vs. GND

28

V

Voltage on FAULT pin

-0.3 to VH+0.3

V

Voltage on other pins (IN, VREF)

-0.3 to 7

V

Table 5.

Total system

Symbol

Parameter

Value

Unit

Isolation withstand voltage applied between each

pin and heatsink plate (AC voltage, t = 60 sec.)

2500

V

(1)

1.

The maximum junction temperature rating of the power chips integrated within the SDIP module is 150 °C

Operating junction temperature for IGBT and diode

-40 to 150

°C

Module case operation temperature

-40 to 125

°C

I

()

T

jmax

–

R

thj

c

–

V

CE sat

() max

()

,

()

×

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=

Obsolete

Product(s)

- Obsolete

Product(s)