STGD3HF60HDT4 datasheet(5/26 Pages) STMICROELECTRONICS

Nome de Peças	STGD3HF60HDT4

Descrição Electrónicos	4.5 A, 600 V very fast IGBT with Ultrafast diode

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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5 / 26 page

STGB3HF60HD, STGD3HF60HDT4,

STGF3HF60HD, STGP3HF60HD

Electrical characteristics

DocID17690 Rev 5

5/26

Table 6: Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCC = 400 V, IC = 1.5 A

RG

= 100 Ω, VGE = 15 V

(see Figure 17: " Test circuit for

inductive load switching"Figure 19:

" Switching waveform")

-

11

-

ns

tr

Current rise time

-

4

-

ns

(di/dt)on

Turn-on current slope

-

285

-

A/µs

td(on)

Turn-on delay time

VCC = 400 V, IC = 1.5 A

RG

= 100 Ω, VGE = 15 V,

Tj = 125 °C (see Figure 17: " Test

circuit for inductive load

switching"Figure 19: " Switching

waveform")

-

10

-

ns

tr

Current rise time

-

5

-

ns

(di/dt)on

Turn-on current slope

-

265

-

A/µs

tr(Voff)

Off voltage rise time

VCC = 400 V, IC = 1.5 A,

RGE

= 100 Ω, VGE = 15 V

(see Figure 17: " Test circuit for

inductive load switching"Figure 19:

" Switching waveform")

-

26

-

ns

td(off)

Turn-off delay time

-

60

-

ns

tf

Current fall time

-

50

-

ns

tr(Voff)

Off voltage rise time

VCC = 400 V, IC = 1.5 A,

RGE

= 100 Ω, VGE = 15 V,

Tj = 125 °C (see Figure 17: " Test

circuit for inductive load

switching"Figure 19: " Switching

waveform")

-

64

-

ns

td(off)

Turn-off delay time

-

69

-

ns

tf

Current fall time

-

71

-

ns

Table 7: Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon(1)

Turn-on switching

energy

VCC = 400 V, IC = 1.5 A

RG

= 100 Ω, VGE = 15 V

(see Figure 17: " Test circuit for

inductive load switching"Figure 19:

" Switching waveform")

-

19

-

µJ

Eoff(2)

Ets

Turn-off switching

energy

-

12

-

µJ

Ets

Total switching energy

-

31

-

µJ

Eon(1)

Turn-on switching

energy

VCC = 400 V, IC = 1.5 A

RG =

100 Ω, VGE = 15 V,

Tj = 125 °C (see Figure 17: " Test

circuit for inductive load

switching"Figure 19: " Switching

waveform")

-

38

-

µJ

Eoff(2)

Turn-off switching

energy

-

35

-

µJ

Ets

Total switching energy

-

73

-

µJ

Notes:

(1)Eon is the turn-on energy when a typical diode is used in the test circuit in Figure 17: " Test circuit for

inductive load switching". If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as

external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C).

(2)Turn-off energy include also the tail of the collector current.

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