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STGB10H60DF Folha de dados(PDF) 10 Page - STMicroelectronics

Nome de Peças STGB10H60DF
Descrição Electrónicos  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB10H60DF Folha de dados(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
STGB10H60DF, STGF10H60DF, STGP10H60DF
10/24
DocID025111 Rev 2
Figure 20. Switching loss vs collector current
Figure 21. Switching loss vs gate resistance
E
0
IC(A)
(μJ)
04
8
100
12
16
200
EON
300
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
20
EOFF
GIPD281020131611FSR
E
100
RG(Ω)
(μJ)
010
20
140
180
220
30
40
260
EOFF
VCC = 400 V, VGE = 15 V,
IC = 10 A, TJ = 175 °C
EON
GIPD281020131618FSR
Figure 22. Switching loss vs temperature
Figure 23. Switching loss vs collector-emitter
voltage
E
0
TJ(°C)
(μJ)
-50
0
50
50
100
150
100
150
EOFF
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 10A
EON
200
GIPD281020131623FSR
E
0
VCE(V)
(μJ)
200
300
400
50
100
150
EOFF
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 10A
200
250
EON
250
350
450
GIPD281020131630FSR


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