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STGB30H60DFB Folha de dados(PDF) 9 Page - STMicroelectronics |
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STGB30H60DFB Folha de dados(HTML) 9 Page - STMicroelectronics |
9 / 21 page DocID026677 Rev 2 9/21 STGB30H60DFB, STGP30H60DFB Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t IC(A) (ns) 0 10 20 1 30 tf TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V tdoff 10 tr tdon 40 50 100 GIPG100720141533FSR t 10 RG(Ω) (ns) 010 20 100 30 tf TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V 40 tdon tdoff tr GIPG100720141549FSR Figure 22. Reverse recovery current vs. diode current slope Figure 23. Reverse recovery time vs. diode current slope Irm 0 di/dt(A/μs) (A) 0 500 1000 40 1500 IF = 60A, Vr = 400V 2000 60 =175°C =25°C 20 TJ TJ 2500 GIPG100720141607FSR trr 0 di/dt(A/μs) (ns) 0 500 1000 100 1500 IF = 30A, Vr = 400V 2000 150 =175°C =25°C 200 50 TJ TJ GIPG110720140846FSR Figure 24. Reverse recovery charge vs. diode current slope Figure 25. Reverse recovery energy vs. diode current slope Qrr 0 di/dt(A/μs) (nC) 0 500 1000 1500 1500 IF = 30A, Vr = 400V 2000 2000 =175°C =25°C 1000 TJ TJ 500 GIPG110720140854FSR Err 0 di/dt(A/μs) (μJ) 0 500 1000 600 1500 IF = 30A, Vr = 400V 2000 1000 =175°C =25°C 200 TJ TJ 400 800 GIPG110720140859FSR |
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