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STGB30H60DFB Folha de dados(PDF) 9 Page - STMicroelectronics

Nome de Peças STGB30H60DFB
Descrição Electrónicos  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Download  21 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB30H60DFB Folha de dados(HTML) 9 Page - STMicroelectronics

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STGB30H60DFB, STGP30H60DFB
Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
IC(A)
(ns)
0
10
20
1
30
tf
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
tdoff
10
tr
tdon
40
50
100
GIPG100720141533FSR
t
10
RG(Ω)
(ns)
010
20
100
30
tf
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
40
tdon
tdoff
tr
GIPG100720141549FSR
Figure 22. Reverse recovery current vs. diode
current slope
Figure 23. Reverse recovery time vs. diode
current slope
Irm
0
di/dt(A/μs)
(A)
0
500
1000
40
1500
IF = 60A, Vr = 400V
2000
60
=175°C
=25°C
20
TJ
TJ
2500
GIPG100720141607FSR
trr
0
di/dt(A/μs)
(ns)
0
500
1000
100
1500
IF = 30A, Vr = 400V
2000
150
=175°C
=25°C
200
50
TJ
TJ
GIPG110720140846FSR
Figure 24. Reverse recovery charge vs. diode
current slope
Figure 25. Reverse recovery energy vs. diode
current slope
Qrr
0
di/dt(A/μs)
(nC)
0
500
1000
1500
1500
IF = 30A, Vr = 400V
2000
2000
=175°C
=25°C
1000
TJ
TJ
500
GIPG110720140854FSR
Err
0
di/dt(A/μs)
(μJ)
0
500
1000
600
1500
IF = 30A, Vr = 400V
2000
1000
=175°C
=25°C
200
TJ
TJ
400
800
GIPG110720140859FSR


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