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STGW80V60F Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STGW80V60F
Descrição Electrónicos  Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60F Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGFW80V60F, STGW80V60F, STGWT80V60F
4/19
DocID026386 Rev 1
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 2 mA
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 80 A
1.85
2.3
V
VGE = 15 V, IC = 80 A
TJ = 125 °C
2.15
VGE = 15 V, IC = 80 A
TJ = 175 °C
2.4
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
5
6
7
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
100
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-
10800
-
nF
Coes
Output capacitance
-
390
-
pF
Cres
Reverse transfer
capacitance
-
220
-
pF
Qg
Total gate charge
VCC = 480 V, IC = 80 A,
VGE = 15 V, see Figure 28
-
448
-
nC
Qge
Gate-emitter charge
-
76
-
nC
Qgc
Gate-collector charge
-
184
-
nC


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