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STGP30H65F Folha de dados(PDF) 7 Page - STMicroelectronics |
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STGP30H65F Folha de dados(HTML) 7 Page - STMicroelectronics |
7 / 13 page DocID025631 Rev 1 7/13 STGP30H65F Electrical characteristics Figure 8. VCE(sat) vs. junction temperature Figure 9. VCE(sat) vs. collector current Figure 10. Forward bias safe operating area Figure 11. Thermal impedance Figure 12. Gate charge vs. gate-emitter voltage Figure 13. Capacitance variations vs. VCE VCE(sat) 1.8 1.6 1.4 1.2 -50 0 TJ(°C) 100 (V) 50 2.0 2.2 150 2.4 2.6 2.8 3.0 IC=15A IC=30A IC=60A AM17366v1 VGE=15V VCE(sat) 1.8 1.6 1.4 1.2 10 20 IC(A) 40 (V) 30 2.0 2.2 50 2.4 2.6 2.8 3.0 TJ=-40°C VGE=15V TJ=25°C TJ=175°C 3.2 1. AM17367v1 IC 100 10 1 1 100 VCE(V) 10 (A) (single pulse TC=25°C, TJ<175°C, VGE=15V) 1µs 100µs 1ms AM17370v1 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -2 10 -1 K δ0 δ0.01 δ0.02 δ0.05 δ0.1 δ0.2 δ0.5 Zth=k Rthj-c δ=tp/t tp t ZthTO2T_B VGE 8 6 4 2 0 Qg(nC) 100 (V) 50 10 VCC= 400V, IC=30A 12 14 16 0 AM17372v1 C 1000 100 0.1 VCE(V) 10 (pF) 1 10 Cies Coes Cres AM17373v1 |
Nº de peça semelhante - STGP30H65F |
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Descrição semelhante - STGP30H65F |
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