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STGW35NB60S Folha de dados(PDF) 4 Page - STMicroelectronics |
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4 / 13 page Obsolete Product(s) - Obsolete Product(s) Electrical characteristics STGW35NB60S 4/13 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 1mA, VGE = 0 600 V VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 20A, VGE= 15V, IC= 20A, Tj= 125°C 1.25 1.2 1.7 V V VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA 2.5 5 V ICES Collector-Emitter Leakage Current (VGE = 0) VCE = Max Rating, VCE = Max Rating, Tc=125°C 10 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ± 100 nA gfs Forward Transconductance VCE = 10V, IC= 18A 20 S Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 1820 167 27 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 20A, VGE = 15V, (see Figure 16) 83 10 27 115 nC nC nC ICL Turn-Off SOA Minimum Current Vclamp = 480V , Tj = 125°C RG = 100Ω 80 A |
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