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STGW35NB60S Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STGW35NB60S
Descrição Electrónicos  N-channel 35A - 600V - TO-247 Low drop PowerMESH??IGBT
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW35NB60S Folha de dados(HTML) 4 Page - STMicroelectronics

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Obsolete
Product(s)
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Product(s)
Electrical characteristics
STGW35NB60S
4/13
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter
Breakdown Voltage
IC = 1mA, VGE = 0
600
V
VCE(SAT)
Collector-Emitter
Saturation Voltage
VGE= 15V, IC= 20A,
VGE= 15V, IC= 20A,
Tj= 125°C
1.25
1.2
1.7
V
V
VGE(th)
Gate Threshold Voltage
VCE= VGE, IC= 250µA
2.5
5
V
ICES
Collector-Emitter Leakage
Current (VGE = 0)
VCE = Max Rating,
VCE = Max Rating,
Tc=125°C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
± 100
nA
gfs
Forward
Transconductance
VCE = 10V, IC= 18A
20
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V, f = 1 MHz,
VGE = 0
1820
167
27
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 20A,
VGE = 15V,
(see Figure 16)
83
10
27
115
nC
nC
nC
ICL
Turn-Off SOA Minimum
Current
Vclamp = 480V ,
Tj = 125°C
RG = 100Ω
80
A


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