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STGW45HF60WD Folha de dados(PDF) 4 Page - STMicroelectronics |
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STGW45HF60WD Folha de dados(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STGW45HF60WD 4/12 Doc ID 15593 Rev 3 Table 7. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, (Figure 16) - 30 12 2600 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, TJ = 125 °C (Figure 16) - 30 14 2200 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RG = 6.8 Ω, VGE = 15 V (Figure 16) - 30 145 50 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RG = 6.8 Ω, VGE =15 V, TJ = 125 °C (Figure 16) - 47 185 65 - ns ns ns Table 8. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff Ets 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C). Eon include diode recovery energy. Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, (Figure 18) - 300 330 630 µJ µJ µJ Eon (1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 30 A RG = 6.8 Ω, VGE = 15 V, TJ = 125 °C (Figure 18) - 550 550 1100 800 µJ µJ µJ Table 9. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 30 A IF = 30 A, TJ = 125 °C - 2 1.65 2.5 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/µs (see Figure 19) - 55 110 3 - ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/µs TJ =125 °C, (see Figure 19) - 140 400 5.5 - ns nC A |
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