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STP15N60M2-EP Folha de dados(PDF) 1 Page - STMicroelectronics |
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STP15N60M2-EP Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 14 page December 2014 DocID027298 Rev 2 1/14 This is information on a product in full production. www.st.com STP15N60M2-EP N- channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max. ID STP15N60M2-EP 650 V 0.378 Ω 11 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications Switching applications Tailored for very high frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STP15N60M2-EP 15N60M2EP TO-220 Tube D(2, TAB) G(1) S(3) AM01476v1_tab |
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