STP165N10F4 datasheet(6/12 Pages) STMICROELECTRONICS

Nome de Peças	STP165N10F4

Descrição Electrónicos	Very low on-resistance

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Electrical characteristics

STP165N10F4

6/12

Doc ID 15781 Rev 2

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area

Figure 3.

Thermal impedance

Figure 4.

Output characteristics

Figure 5.

Transfer characteristics

Figure 6.

Normalized BVDSS vs temperature

Figure 7.

Static drain-source on resistance

ID

100

10

1

0.1

1

100

VDS(V)

10

(A)

Oper

ation

in

thi

s

are

a i

s

Limited

by

m

ax

R

D

S

(on)

100µs

1ms

10ms

Tj=150°C

Tc=25°C

Single pulse

AM08651v1

10

-5

10

-4

10

-3

10

-2

10

-1

tp(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/τ

tp

τ

Single pulse

δ=0.5

280tok

ID

150

100

50

0

VDS(V)

3

(A)

1

2

4

200

250

5V

6V

7V

VGS=10V

300

350

4V

AM08652v1

ID

0

4

VGS(V)

8

(A)

2

6

VDS=2V

150

100

50

200

250

300

AM08653v1

BVDSS

-75

TJ(°C)

(norm)

-25

75

25

125

0.90

0.95

1.00

1.05

1.10

ID=1mA

175

AM08654v1

RDS(on)

4.8

4.7

4.6

4.5

0

40

ID(A)

(m

Ω)

20

60

4.9

5.0

5.1

5.2

VGS=10V

100

80

120

5.3

AM08655v1

Nº de peça semelhante - STP165N10F4

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Inchange Semiconductor ...	STP165N10F4	303Kb / 2P	isc N-Channel MOSFET Transistor 2023-9-20

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