BCW31 datasheet(1/1 Pages) ZETEX

Nome de Peças	BCW31

Descrição Electrónicos	SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

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SOT23 NPN SILICON PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 - JUNE 1995

PARTMARKING DETAILS

BCW31 D1

BCW31R D4

BCW32 D2

BCW32R D5

BCW33 D3

BCW33R D6

COMPLEMENTARY TYPES

BCW31 - BCW29

BCW32 - BCW30

BCW33 - N/A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

32

V

Collector-Emitter Voltage

VCEO

32

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

200

mA

Continuous Collector Current

IC

100

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Base - Emitter Voltage

VBE

550

700

mV

IC=2mA, VCE= 5V

Collector-Emitter

Saturation Voltage

VCE(SAT)

120

210

250

mV

IC=10mA, IB = 0.5mA

IC=50mA, IB =2.5mA

Base-Emitter

Saturation Voltage

VBE(SAT)

750

850

mV

IC=10mA, IB=0.5mA

IC =50mA, IB=2.5mA

Collector- Base Cut-Off Current ICBO

100

10

nA

µ

A

IE=0, VCB=20V

IE=0,VCB=20V,Tj=100°C

Static Forward

Current Transfer

Ratio

BCW31

hFE

110

90

220

IC=10µA, VCE=5V

IC=2mA, VCE=5V

BCW32

hFE

200

150

450

IC=10µA, VCE=5V

IC=2mA, VCE=5V

BCW33

hFE

420

270

800

IC=10µA, VCE=5V

IC=2mA, VCE=5V

Transition Frequency

fT

300

MHz

IC=10mA, VCE=5V

f = 35MHz

Collector Capacitance

CTC

4pF

IE =Ie =0, VCB=10V

f= 1MHz

Noise Figure

N

10

dB

IC= 200mA, VCE=5V

RS =2KΩ, f=1KHz

B= 200Hz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

BCW31

BCW32

BCW33

PAGE NO

C

B

E

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