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TS3A225EYFFR Folha de dados(PDF) 8 Page - Texas Instruments |
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TS3A225EYFFR Folha de dados(HTML) 8 Page - Texas Instruments |
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8 / 37 page  TS3A225E SCDS329A – AUGUST 2012 – REVISED MAY 2013 www.ti.com ELECTRICAL CHARACTERISTICS Unless otherwise noted the specification applies over the VDD range and operating junction temp –40°C ≤ TA ≤ 70°C. Typical values are for VDD = 3.3V and TJ = 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDD Input voltage range 2.7 3.3 4.5 V IDD Quiescent current VMIC = 1.8 V to VDD 8 10 µA VOL SDA output high voltage IOL = 3 mA 0.3 V IIN-I2C SCL, SDA input leakage VMIC = 1.8 V to VDD 0.1 1 µA IIN-ADDR ADDR input leakage VMIC = 0 V 0.1 1 µA SWITCH RESISTANCE RF1 (WCSP) FET1 on resistance (WCSP Package) 70 m Ω RF1 (QFN) FET1 on resistance (QFN Package) 100 m Ω VDD = 2.7 V, VGND = 0 V, IGND = 10 mA (see Figure 3) RF2 (WCSP) FET2 on resistance (WCSP Package) 70 m Ω RF2 (QFN) FET2 on resistance (QFN Package) 100 m Ω RS1PS S1PS on resistance 10 Ω VDD = 2.7 V, RS1PR S1PR on resistance 10 Ω VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V, RS1NS S1NS on resistance 1 Ω IMIC = ±10 mA (see Figure 4) RS1NR S1NR on resistance 1 Ω RMIC_PRESENT /MIC_PRESENT pin output resistance VDD = 2.7 V 25 Ω SWITCH LEAKAGE CURRENT IOFF-0.1 FET1 and FET2 off leakage 1 µA VIN = 0 V to 2.7 V, VOUT = 0 V, IOFF-1 S1NS, S1NR off leakage 1 µA VDD = 4.5V (see Figure 5) IOFF-10 S1PS, S1PR off leakage 1 µA ION-1 S1NS, S1NR on leakage 1 µA VIN = 0 V to 2.7 V, VOUT = 0 V, VDD = 4.5 V (see Figure 6) ION-10 S1PS, S1PR on leakage 1 µA SWITCH DYNAMIC CHARACTERISTICS PSR217 V = 200 mVPP, f = 217 Hz –100 dB Power supply rejection, PSR1k V = 200 mVPP, f = 1 kHz –80 dB RL = 5 Ω (see Figure 7) PSR20k V = 200 mVPP, f = 20 kHz –50 dB SLEEVE_SENSE or RING2_SENSE to ISOS1 V = 200 mVPP, f = 20 kHz, RL = 50Ω –100 dB MICP Isolation (see Figure 8) SLEEVE_SENSE to RING2_SENSE V = 200 mVPP, f = 20 kHz, RL = 50Ω (see SEPS1 –60 dB Separation Figure 9) 0.003 THD200 V = 200mVPP, f = 20-20 kHz, RS = 600Ω % Total Harmonic Distortion (see Figure 10) 0.002 THD500 V = 500mVPP, f = 20-20kHz, RS = 600Ω % Default 30 µs tBBM Break-Before-Make Off Time BBM register bit = 1’b1 60 µs tDETC Detection sequence duration 360 500 ms 8 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: TS3A225E |
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