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FDD8878 Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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FDD8878 Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2005 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A3 www.fairchildsemi.com 3 Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25°C, L = 65uH, IAS = 28A, VDD = 27V, VGS = 10V. 3: FDD8878_NL / FDU8878_NL is lead free product. FDD8878_NL / FDU8878_NL marking will appear on the reel label. CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz -880 - pF COSS Output Capacitance - 195 - pF CRSS Reverse Transfer Capacitance - 110 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 3.1 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 35A Ig = 1.0mA -19 26 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 10 14 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 0.9 1.3 nC Qgs Gate to Source Gate Charge - 2.6 - nC Qgs2 Gate Charge Threshold to Plateau - 1.7 - nC Qgd Gate to Drain “Miller” Charge - 4.5 - nC tON Turn-On Time VDD = 15V, ID = 35A VGS = 4.5V, RGS = 16Ω -- 129 ns td(ON) Turn-On Delay Time - 7 - ns tr Rise Time - 79 - ns td(OFF) Turn-Off Delay Time - 38 - ns tf Fall Time - 27 - ns tOFF Turn-Off Time - - 97 ns VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V ISD = 3.2A - - 1.0 V trr Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- - 23 ns QRR Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- - 9 nC |
Nº de peça semelhante - FDD8878 |
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Descrição semelhante - FDD8878 |
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