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74LVC1G3157DRYRG4 Folha de dados(PDF) 5 Page - Texas Instruments |
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74LVC1G3157DRYRG4 Folha de dados(HTML) 5 Page - Texas Instruments |
5 / 40 page 5 SN74LVC1G3157 www.ti.com SCES424L – JANUARY 2003 – REVISED MAY 2017 Product Folder Links: SN74LVC1G3157 Submit Documentation Feedback Copyright © 2003–2017, Texas Instruments Incorporated Pin Functions PIN I/O DESCRIPTION NAME SOT-23, SC70, SON, X2SON, or SOT DSBGA B2 1 A1 I/O Switch I/O. Set S high to enable. GND 2 B1 — Ground B1 3 C1 I/O Switch I/O. Set S low to enable. A 4 C2 I/O Common terminal VCC 5 B2 — Power supply S 6 A2 I Select (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to ground unless otherwise specified. (3) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (4) This value is limited to 5.5 V maximum. (5) VI, VO, VA, and VBn are used to denote specific conditions for VI/O. (6) II, IO, IA, and IBn are used to denote specific conditions for II/O. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage(2) –0.5 6.5 V VIN Control input voltage(2)(3) –0.5 6.5 V VI/O Switch I/O voltage(2)(3)(4)(5) –0.5 VCC + 0.5 V IIK Control input clamp current VIN < 0 –50 mA II/OK I/O port diode current VI/O < 0 or VI/O > VCC ±50 mA II/O On-state switch current(6) VI/O = 0 to VCC ±128 mA Continuous current through VCC or GND ±100 mA TJ Junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 |
Nº de peça semelhante - 74LVC1G3157DRYRG4 |
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Descrição semelhante - 74LVC1G3157DRYRG4 |
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