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2SK3342 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SK3342
Descrição Electrónicos  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
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2SK3342
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Switching Regulator Applications DC−DC Converter, and
Motor Drive Applications
l Low drain−source ON resistance
: RDS (ON) = 0.8 Ω (typ.)
l High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 250 V)
l Enhancement−mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
250
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
250
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
4.5
A
Drain current
Pulse (Note 1)
IDP
18
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
51
mJ
Avalanche current
IAR
4.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω,
IAR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)


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