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2SK3342 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SK3342 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SK3342 2002-01-25 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3342 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 250 V Drain−gate voltage (RGS = 20 kΩ) VDGR 250 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 4.5 A Drain current Pulse (Note 1) IDP 18 A Drain power dissipation (Tc = 25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 51 mJ Avalanche current IAR 4.5 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) |
Nº de peça semelhante - 2SK3342 |
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Descrição semelhante - 2SK3342 |
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